Applied Mathematics and Mechanics (English Edition) ›› 2022, Vol. 43 ›› Issue (9): 1367-1380.doi: https://doi.org/10.1007/s10483-022-2900-5

• 论文 • 上一篇    下一篇

Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers

Kai FANG1,2, Nian LI1, Peng LI1,2, Zhenghua QIAN1,2, V. KOLESOV3, I. KUZNETSOVA3   

  1. 1. State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
    2. Nanjing University of Aeronautics and Astronautics Shenzhen Research Institute, Shenzhen 518057, Guangdong Province, China;
    3. Kotel'nikov Institute of Radio Engineering and Electronics of Russian Academy of Sciences, Moscow 125009, Russia
  • 收稿日期:2022-03-15 修回日期:2022-07-08 出版日期:2022-09-01 发布日期:2022-08-31
  • 通讯作者: Zhenghua QIAN, E-mail: qianzh@nuaa.edu.cn
  • 基金资助:
    the National Natural Science Foundation of China (Nos. 12061131013, 11972276, 1211101401, 12172171, and 12102183), the State Key Laboratory of Mechanics and Control of Mechanical Structures of Nanjing University of Aeronautics and Astronautics (No. MCMS-E-0520K02), the Fundamental Research Funds for the Central Universities of China (Nos. NE2020002 and NS2019007), the National Natural Science Foundation of China for Creative Research Groups (No. 51921003), the Postgraduate Research & Practice Innovation Program of Jiangsu Province of China (No. KYCX21 0179), the National Natural Science Foundation of Jiangsu Province of China (No. BK20211176), the Local Science and Technology Development Fund Projects Guided by the Central Government of China (No. 2021Szvup061), and the Jiangsu High-Level Innovative and Entrepreneurial Talents Introduction Plan (Shuangchuang Doctor Program, No. JSSCBS20210166)

Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers

Kai FANG1,2, Nian LI1, Peng LI1,2, Zhenghua QIAN1,2, V. KOLESOV3, I. KUZNETSOVA3   

  1. 1. State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;
    2. Nanjing University of Aeronautics and Astronautics Shenzhen Research Institute, Shenzhen 518057, Guangdong Province, China;
    3. Kotel'nikov Institute of Radio Engineering and Electronics of Russian Academy of Sciences, Moscow 125009, Russia
  • Received:2022-03-15 Revised:2022-07-08 Online:2022-09-01 Published:2022-08-31
  • Contact: Zhenghua QIAN, E-mail: qianzh@nuaa.edu.cn
  • Supported by:
    the National Natural Science Foundation of China (Nos. 12061131013, 11972276, 1211101401, 12172171, and 12102183), the State Key Laboratory of Mechanics and Control of Mechanical Structures of Nanjing University of Aeronautics and Astronautics (No. MCMS-E-0520K02), the Fundamental Research Funds for the Central Universities of China (Nos. NE2020002 and NS2019007), the National Natural Science Foundation of China for Creative Research Groups (No. 51921003), the Postgraduate Research & Practice Innovation Program of Jiangsu Province of China (No. KYCX21 0179), the National Natural Science Foundation of Jiangsu Province of China (No. BK20211176), the Local Science and Technology Development Fund Projects Guided by the Central Government of China (No. 2021Szvup061), and the Jiangsu High-Level Innovative and Entrepreneurial Talents Introduction Plan (Shuangchuang Doctor Program, No. JSSCBS20210166)

摘要: In this paper, we propose a specific two-layer model consisting of a functionally graded (FG) layer and a piezoelectric semiconductor (PS) layer. Based on the macroscopic theory of PS materials, the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are investigated. The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series. Results show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG layer. In addition, by creating jump discontinuities in the material properties of the FG layer, potential barriers/wells can be produced in the middle of the fiber. Similarly, the potential barrier configuration near the interface of a homogeneous PS PN junction can also be manipulated in this way, which offers a new choice for the design of PN junction based devices.

关键词: piezoelectric semiconductor (PS), functionally graded (FG) material, composite structure, PN junction

Abstract: In this paper, we propose a specific two-layer model consisting of a functionally graded (FG) layer and a piezoelectric semiconductor (PS) layer. Based on the macroscopic theory of PS materials, the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are investigated. The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series. Results show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG layer. In addition, by creating jump discontinuities in the material properties of the FG layer, potential barriers/wells can be produced in the middle of the fiber. Similarly, the potential barrier configuration near the interface of a homogeneous PS PN junction can also be manipulated in this way, which offers a new choice for the design of PN junction based devices.

Key words: piezoelectric semiconductor (PS), functionally graded (FG) material, composite structure, PN junction

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